IRF6798MPBF diode equivalent, hexfet power mosfet plus schottky diode.
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1000
TOP VGS 10V 5.0V 4.3V 3.5V 3.3V 3.0V 2.8V 2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is follo.
The IRF6798MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET packag.
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